JPH0477459B2 - - Google Patents
Info
- Publication number
- JPH0477459B2 JPH0477459B2 JP62241413A JP24141387A JPH0477459B2 JP H0477459 B2 JPH0477459 B2 JP H0477459B2 JP 62241413 A JP62241413 A JP 62241413A JP 24141387 A JP24141387 A JP 24141387A JP H0477459 B2 JPH0477459 B2 JP H0477459B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- lateral
- impurity
- silicon film
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 and further Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241413A JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241413A JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6482668A JPS6482668A (en) | 1989-03-28 |
| JPH0477459B2 true JPH0477459B2 (en]) | 1992-12-08 |
Family
ID=17073920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62241413A Granted JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482668A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244533A (en) * | 1991-01-07 | 1993-09-14 | Kabushiki Kaisha Toshiba | Method of manufacturing bipolar transistor operated at high speed |
| US5294558A (en) * | 1993-06-01 | 1994-03-15 | International Business Machines Corporation | Method of making double-self-aligned bipolar transistor structure |
| US6566201B1 (en) * | 2001-12-31 | 2003-05-20 | General Semiconductor, Inc. | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion |
-
1987
- 1987-09-25 JP JP62241413A patent/JPS6482668A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6482668A (en) | 1989-03-28 |
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